107年 - 107 國立嘉義大學_碩士班招生考試試題_電機工程學系：電子學#146540

1. Using the fact that a silicon diode has IS = 10^-15 A at 26.5°C and that IS increases by 25% per 1°C rise in temperature, find the value of IS at 200°C. (5%)

(a) Find the percentage of each cycle in which the diode is in on state. (10%)

(b) Find the peak current. (5%)
　Fig. 1

(a) For V_B = +2 V, find V_E and V_C. (5%)

(b) For V_B = +1 V, find V_E and V_C. (5%)

(c) For V_B = 0 V, find V_E and V_C. (5%)
　

(a) What bias current “I_D” results? (10%)

(b) If a transistor for which k'n(W/L) is 50% higher is used, what is the resulting current “I_D”?
(10%)
　

(a) Find the required value of gate width “W₁” for Q₁. (10%)

(b) Find the required value of gate width “W₂” for Q₂. (10%)

(c) Find the value of “R”. (5%)
　

6. Determine the current io for the circuit shown in Fig. 5. (10%)
　

7. Determine the voltage vo for this circuit shown in Fig. 6. (10%)